@Article{BaldanAzevCoutFerr:2013:MoStIm,
author = "Baldan, Mauricio Ribeiro and Azevedo, Adriana Faria and Couto, A.
B. and Ferreira, Nedenei Gomes",
affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto
Nacional de Pesquisas Espaciais (INPE)} and {} and {Instituto
Nacional de Pesquisas Espaciais (INPE)}",
title = "Cathodic and anodic pre-treated boron doped diamond with different
sp 2 content: Morphological, structural, and impedance
spectroscopy characterizations",
journal = "Journal of Physics and Chemistry of Solids",
year = "2013",
volume = "74",
number = "12",
pages = "1830--1835",
keywords = "Acceptor concentrations, Boron-doped diamond films, Charge
transfer resistance, Electrochemical response, Hot-filament
chemical vapor deposition, Impedance spectroscopy, Surface
conductive layer, Vapour deposition, Chemical vapor deposition,
Electrochemical impedance spectroscopy, Scanning electron
microscopy, Semiconducting gallium compounds, Spectroscopy,
Vapors, Semiconductor doping.",
abstract = "In this work, the influence of cathodic (Red) and anodic (Ox)
pre-treatment on boron doped diamond (BDD) films grown with
different sp2/sp 3 ratios was systematically studied. The sp2/sp 3
ratios were controlled by the addition of CH4 of 1,3,5 and 7 sccm
in the gas inlet during the growth process. The electrodes were
treated in 0.5 mol L-1 H2SO4 at -3 and 3 V vs Ag/AgCl,
respectively, for 30 min. The electrochemical response of BDD
films was investigated using electrochemical impedance
spectroscopy (EIS) and Mott-Schottky Plot (MSP) measurements. Four
film sample sets were produced in a hot filament chemical vapor
deposition reactor. During the growth process, an additional H2
line passing through a bubbler containing the B 2O3 dissolved in
methanol was used to carry the boron. The scanning electron
microscopy morphology showed well faced films with a small
decrease in their grain size as the CH4 concentration increased.
The Raman spectra depicted a pronounced sp2 band, mainly for films
with 5 and 7 sccm of CH4. MSP showed a decrease in the acceptor
concentration as the CH4 increased indicating the CH4 influence on
the doping process for Red-BDD and Ox-BDD samples. Nonetheless, an
apparent increase in the acceptor concentrations for both Ox-BDD
samples was observed compared to that for Red-BDD samples, mainly
attributed to the surface conductive layer (SCL) formation after
this strong oxidation process. The EIS Nyquist plots for Red-BDD
showed a capacitance increase for the films with higher sp2
content (5 and 7 sccm). On the other hand, the Nyquist plots for
Ox-BDD can be described as semicircles near the origin, at high
frequencies, where their charge transfer resistance strongly
varied with the sp2 increase in such films. © 2013 Elsevier Ltd.",
doi = "10.1016/j.jpcs.2013.07.015",
url = "http://dx.doi.org/10.1016/j.jpcs.2013.07.015",
issn = "0022-3697",
label = "scopus 2013-11",
language = "en",
targetfile = "CTE170.pdf",
urlaccessdate = "30 abr. 2024"
}